Features
- It is required to reduce Organic Contaminants in semiconductor.
- It would facilitate Organic Contaminants Control if you could learn about organic compounds on wafer surface.
- TD-GC/MS method is effective to measure Organic Contaminants.
Contaminants on Silicon Wafers

Typical Organic Contaminants on Si Wafer
・Phthalates, e.g. DEP , DBP , DOP
・Organophorus, e.g. TBP,TCEP,TEP,TPP,TCP
・Antioxidants, e.g. BHT , oxide of BHT
・Siloxanes, e.g.cyclo siloxanes (D3 to D15)
・Adipates, e.g. DBA , DOA
・Amines
・Hydrocarbons
Effects of Organic Contamination on Semiconductor Devices
・Degradation of gate oxide film
・Degradation of Time Dependent Dielectric
・Breakdown (TDDB) characteristics
・Haze degradation
・Poor oxide quality
・Silicon carbide formation
・Poor adhesion and conductivity
・Corrosion
Source of Organic Contaminations
・Clean Room Air
・Wafer Boxes
・Outgassing of Construction Materials
(Filters, Sealant, Coatings, Adhesive, etc.)
・Human
・Chemical Reagents (Photo Resist, Surfactants, etc.)
Advantages of Monitoring Organic Contaminations
・Characterize and quantify contaminants
・Identify and root out the contamination sources
・Improve reliability
・Solve production problems quickly
・Increase yields
Methods for the Analysis of Organic Contaminants on Silicon Wafer Surfaces
・X-ray Photoelectron Spectroscopy (XPS)
・Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
・Thermal Desorption Spectroscopy (TDS)
・Ion Mobility Spectrometry (IMS)
・FTIR
・TD-GC/MS (SWA-GC/MS)
Standards of Organic Contaminants Methods
・Silicon Wafer Surface: SEMI MF1982-99
・Outgassing: SEMI E108-0301
・JACA (Japan Air Cleaning Association) No.34-99
・Cleanroom: ISO TC/209 WG8 (Molecular Contamination)
SEMI approved TD-GC standard test method
SEMI MF1982-1103
・Standard Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces
by Thermal Desorption Gas Chromatography
・This method was shifted from ASTM F1982-99.
Method A: Performed on cleaved wafers
Method B: Performed on full wafers
SEMI Standard
SEMI E108-0301
・Test Method for the assessment of Outgassing Organic Contamination from Minienvironments using
Gas Chromatography/Mass Spectroscopy
Picture of SWA-256M Main Body (Manual Type)

Structure of Quartz Chamber
Schematic of TD-GC/MS

SWA-256M Performance with standard sample "Procedure of measurement"

SWA-256M Performance with Standard Sample Measurement Conditions
| SWA-256 |
| Furnace Temp. 30°C→15min (Rate) →400C (15min hold) |
| Adsorbent materials |
: Tenax TA |
| Trap Time |
: 30min |
| Trap Temp. |
: 30C |
| Purge Gas |
: Helium |
| Purge Gas Total Flow |
: 350ml/min |
| Trap Flow |
: 150ml/min |
| Back side Exhaust Flow |
: 150ml/min |
| |
|
| TD |
|
| Desorb Temp. |
: 250C |
| Desorb Time |
: 15min |
| Cold Trap Temp. |
: -130C |
| Inject Temp. |
: 250C |
| |
|
| GC |
|
| Column |
: InertCap 1, 60m x 0.25 mm x 0.25um |
| Program |
: 40C (5min) → 280C (21min) Rate10C/min |
| |
|
| MS |
|
| Mass range |
: 35 - 450 amu |
| Interface Temp. |
: 260º |
| Ion source Temp. |
: 200°C |
| Ionized Voltage |
: 70ev PM 450v |
View Application Notes
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