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Silicon Wafer Analyzer SWA 256 Series

Features

  • It is required to reduce Organic Contaminants in semiconductor.
  • It would facilitate Organic Contaminants Control if you could learn about organic compounds on wafer surface.
  • TD-GC/MS method is effective to measure Organic Contaminants.

Contaminants on Silicon Wafers

Typical Organic Contaminants on Si Wafer

・Phthalates, e.g. DEP , DBP , DOP
・Organophorus, e.g. TBP,TCEP,TEP,TPP,TCP
・Antioxidants, e.g. BHT , oxide of BHT
・Siloxanes, e.g.cyclo siloxanes (D3 to D15)
・Adipates, e.g. DBA , DOA
・Amines
・Hydrocarbons


Effects of Organic Contamination on Semiconductor Devices

・Degradation of gate oxide film
・Degradation of Time Dependent Dielectric
・Breakdown (TDDB) characteristics
・Haze degradation
・Poor oxide quality
・Silicon carbide formation
・Poor adhesion and conductivity
・Corrosion

Source of Organic Contaminations

・Clean Room Air 
・Wafer Boxes
・Outgassing of Construction Materials
(Filters, Sealant, Coatings, Adhesive, etc.)
・Human
・Chemical Reagents (Photo Resist, Surfactants, etc.)

Advantages of Monitoring Organic Contaminations

・Characterize and quantify contaminants
・Identify and root out the contamination sources
・Improve reliability
・Solve production problems quickly
・Increase yields

Methods for the Analysis of Organic Contaminants on Silicon Wafer Surfaces

・X-ray Photoelectron Spectroscopy (XPS)
・Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
・Thermal Desorption Spectroscopy (TDS)
・Ion Mobility Spectrometry (IMS)
・FTIR
TD-GC/MS (SWA-GC/MS)

Standards of Organic Contaminants Methods

・Silicon Wafer Surface: SEMI MF1982-99
・Outgassing: SEMI E108-0301
・JACA (Japan Air Cleaning Association) No.34-99
・Cleanroom: ISO TC/209 WG8 (Molecular Contamination) 

SEMI approved TD-GC standard test method

SEMI MF1982-1103

・Standard Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces
by Thermal Desorption Gas Chromatography
・This method was shifted from ASTM F1982-99.

Method A: Performed on cleaved wafers
Method B: Performed on full wafers

SEMI Standard

SEMI E108-0301

・Test Method for the assessment of Outgassing Organic Contamination from Minienvironments using
Gas Chromatography/Mass Spectroscopy

Picture of SWA-256M Main Body (Manual Type)

Structure of Quartz Chamber

Schematic of TD-GC/MS

SWA-256M Performance with standard sample "Procedure of measurement"

SWA-256M Performance with Standard Sample Measurement Conditions

SWA-256
Furnace Temp. 30°C→15min (Rate) →400C (15min hold)
Adsorbent materials : Tenax TA
Trap Time : 30min
Trap Temp. : 30C
Purge Gas : Helium
Purge Gas Total Flow : 350ml/min
Trap Flow : 150ml/min
Back side Exhaust Flow : 150ml/min
TD
Desorb Temp. : 250C
Desorb Time : 15min
Cold Trap Temp. : -130C
Inject Temp. : 250C
GC
Column : InertCap 1, 60m x 0.25 mm x 0.25um
Program : 40C (5min) → 280C (21min) Rate10C/min
MS
Mass range : 35 - 450 amu
Interface Temp. : 260º
Ion source Temp. : 200°C
Ionized Voltage : 70ev PM 450v

View Application Notes

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